bc107,a,b bc108b,c bc109b,c npn silicon transistor description: the central semiconductor bc107, bc108, bc109 series types are small signal npn silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. marking: full part number maximum ratings: (t a =25c) symbol bc107 bc108 bc109 units collector-base voltage v cbo 50 30 30 v collector-emitter voltage v ceo 45 25 25 v emitter-base voltage v ebo 6.0 5.0 5.0 v continuous collector current i c 200 ma power dissipation p d 600 mw operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance ? jc 175 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =45v (bc107) 15 na i cbo v cb =45v, t a =125c (bc107) 4.0 a i cbo v cb =25v (bc108, bc109) 15 na i cbo v cb =25v, t a =125c (bc108, bc109) 4.0 a bv ceo i c =2.0ma (bc107) 45 v bv ceo i c =2.0ma (bc108, bc109) 25 v bv ebo i e =10a (bc107) 6.0 v bv ebo i e =10a (bc108, bc109) 5.0 v v ce(sat) i c =10ma, i b =0.5ma 0.25 v v ce(sat) i c =100ma, i b =5.0ma 0.6 v v be(sat) i c =10ma, i b =0.5ma 0.7 0.83 v v be(sat) i c =100ma, i b =5.0ma 1.0 1.05 v v be(on) v ce =5.0v, i c =2.0ma 0.55 0.7 v v be(on) v ce =5.0v, i c =10ma 0.77 v h fe v ce =5.0v, i c =10a (bc107b, bc108b, bc109b) 40 h fe v ce =5.0v, i c =10a (bc108c, bc109c) 100 h fe v ce =5.0v, i c =2.0ma (bc107) 110 450 h fe v ce =5.0v, i c =2.0ma (BC107A) 110 220 h fe v ce =5.0v, i c =2.0ma (bc107b, bc108b, bc109b) 200 450 h fe v ce =5.0v, i c =2.0ma (bc108c, bc109c) 420 800 to-18 case r1 (16-august 2012) www.centralsemi.com
bc107,a,b bc108b,c bc109b,c npn silicon transistor lead code: 1) emitter 2) base 3) collector marking: full part number to-18 case - mechanical outline electrical characteristics - continued: (t a =25c unless otherwise noted) symbol test conditions min typ max units h fe v ce =5.0v, i c =2.0ma, f=1.0khz (bc107) 125 500 h fe v ce =5.0v, i c =2.0ma, f=1.0khz (BC107A) 125 260 h fe v ce =5.0v, i c =2.0ma, f=1.0khz (bc107b, bc108b, bc109b) 240 500 h fe v ce =5.0v, i c =2.0ma, f=1.0khz (bc108c) 500 h fe v ce =5.0v, i c =2.0ma, f=1.0khz (bc109c) 450 900 f t v ce =5.0v, i c =10ma, f=100mhz 150 mhz c ob v cb =10v, i e =0, f=1.0mhz 4.5 pf nf v ce =5.0v, i c =0.2ma, r g =2.0k, b=200hz, f=1.0khz (bc107, bc108) 10 db nf v ce =5.0v, i c =0.2ma, r g =2.0k, b=200hz, f=1.0khz (bc109) 4.0 db www.centralsemi.com r1 (16-august 2012)
|
